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Package Marking and Ordering Information
Part Number
FDD6N25TM
Top Mark
FDD6N25
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 250 V, V GS = 0 V
V DS = 200 V, T C = 125 ° C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
250
--
--
--
--
--
--
0.25
--
--
--
--
--
--
1
10
100
-100
V
V/ ° C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 2.2 A
V DS = 40 V, I D = 2.2 A
3.0
--
--
--
0.9
5.5
5.0
1.1
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
--
--
--
194
38
5
250
50
8
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 125 V, I D = 6 A,
V GS = 10 V, R G = 25 Ω
V DS = 200 V, I D = 6 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
10
25
7
12
4.5
1.5
1.8
30
60
24
34
6
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
4.4
18
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 4.4 A
V GS = 0 V, I S = 6 A,
dI F /dt =100 A/ μ s
--
--
--
--
145
0.55
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3.7 mH, I AS = 4.4 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 4.4 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2007 Fairchild Semiconductor Corporation
FDD6N25 Rev. C1
2
www.fairchildsemi.com
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